參數(shù)資料
型號: KFG2816D1M-PEB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: OneNAND SPECIFICATION
中文描述: OneNAND的規(guī)格
文件頁數(shù): 25/87頁
文件大?。?/td> 1175K
代理商: KFG2816D1M-PEB
OneNAND128
FLASH MEMORY
25
7.17 Command Register (R/W): F220h, default=0000h
Command
: operation of the memory interface
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Command
NOTE
:
1)’Reset OneNAND’(=Hot reset) command makes the registers(except RDYpol, INTpol, IOBE, and OTP
L
bits) and NAND Flash core into default state as
the warm reset(=reset by RP pin).
This R/W register describes the operation of the OneNAND interface.
Note that all commands should be issued right after INT is turned from ready state to busy state. (i.e. right after 0 is written to INT register.) After any
command is issued and the corresponding operation is completed, INT goes back to ready state. (00F0h and 00F3h may be accepted during busy state
of some operations. Refer to the rightmost column of the command register table above.)
CMD
Operation
Acceptable
command
during busy
0000h
Load single/multiple sector data unit into buffer
00F0h, 00F3h
0013h
Load single/multiple spare sector into buffer
00F0h, 00F3h
0080h
Program single/multiple sector data unit from buffer
00F0h, 00F3h
001Ah
Program single/multiple spare area sector from buffer
00F0h, 00F3h
001Bh
Copy back program
00F0h, 00F3h
0023h
Unlock NAND array block(s) from start block address to end block address
-
002Ah
Lock NAND array block(s) from start block address to end block address
-
002Ch
Lock-tight NAND array block(s) from start block address to end block address
-
0071h
Erase Verify Read
00F0h, 00F3h
0094h
Block Erase
00F0h, 00F3h
0095h
Multi-Block Erase
00F0h, 00F3h
00B0h
Erase Suspend
00F3h
0030h
Erase Resume
00F0h, 00F3h
00F0h
Reset NAND Flash Core
-
00F3h
Reset OneNAND 1)
-
0065h
OTP Access
00F0h, 00F3h
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