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參數(shù)資料
| 型號(hào)： | KFG2816D1M-PEB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OneNAND SPECIFICATION |
| 中文描述： | OneNAND的規(guī)格 |
| 文件頁(yè)數(shù)： | 40/87頁(yè) |
| 文件大?。?/td> | 1175K |
| 代理商： | KFG2816D1M-PEB |
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OneNAND128
FLASH MEMORY
40
Power On
Figure 10. State diagram of NAND Flash Write Protection
SBA, EBA
+Unlock
Command
Unlock
Lock
Lock
Lock
Lock-tight
SBA, EBA
+Partial Lock-tight
Command
Unlock
Lock
SBA, EBA
+Partial Lock-tight
Command
Lock
SBA, EBA
+Partial Lock
Command
Lock-tight
Lock
Unlock
Lock-tight
Lock
Note ; The below cases are prohibited in write protection modes.
Even though these cases happen, Error bit of Controller Status Register(F240h)is not updated.
Case1. Unlock
SBA
EBA
Lock-tight
Unlock
Case2. Lock
SBA
EBA
Lock
Unlock
Case3. Lock-tight
SBA
EBA
SBA, EBA
+Partial Lock-tight
Command
Lock-tight
Lock
Lock
Sustained
with last
SBA, EBA
Unlock
Lock
SBA, EBA
+Unlock
Command
Unlock
Lock
SBA, EBA
+Partial Lock
Command
Changed
with new
SBA, EBA
Changed
with new
SBA, EBA
If this case happens, the command is ignored and last status is sustained.
If this case happens, the command is ignored and last status is sustained.
If this case happens, the selected area changes to be lock-tight.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG2816D1M-PED | OneNAND SPECIFICATION |
| KFG2816D1M-PIB | OneNAND SPECIFICATION |
| KFH1G16D2M-DEB | FLASH MEMORY |
| KFG1216U2M-DEB | FLASH MEMORY |
| KFH1216U2M-DEB | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG2816D1M-PED | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816D1M-PIB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816D1M-PID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816Q1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816Q1M-DEB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
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