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參數(shù)資料
| 型號(hào)： | KFG2816U1M-PED |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OneNAND SPECIFICATION |
| 中文描述： | OneNAND的規(guī)格 |
| 文件頁數(shù)： | 30/87頁 |
| 文件大?。?/td> | 1175K |
| 代理商： | KFG2816U1M-PED |
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OneNAND128
FLASH MEMORY
30
7.27 ECC Status Register(R): FF00h, default=0000h
ERm
(ECC Error for Main area data) &
ERs
(ECC Error for Spare area data)
:
ERm0/1 is for first/second
selected sector in main of BufferRAM,
ERs0/1 is for first/second
selected sector in spare of
BufferRAM.
ERm and ERs show the number of error nits in a sector as a result of ECC check at the load operation.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(00000000)
ERm1
ERs1
ERm0
ERs0
NOTE
:
1. 3bits or more error detection is not supported.
7.28 ECC Result of first selected Sector Main area data Register (R): FF01h, default=0000h
ERm, ERs
ECC Status
00
No Error
01
1-bit error(correctable)
10
2-bit error(uncorrectable)
1)
11
Reserved
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000)
ECCposWord0
ECCposIO0
7.29 ECC Result of first selected Sector Spare area data Register (R): FF02h, default=0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000)
ECClogSector0
ECCposIO0
7.30 ECC Result of second selected Sector Main area data Register (R): FF03h, default=0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000)
ECCposWord1
ECCposIO1
7.31 ECC Result of second selected Sector Spare area data Register (R): FF04h, default=0000h
NOTE
:
1. ECCposWord: ECC error position address that selects one of Main area data(256words)
2. ECCposIO: ECC error position address which selects one of sixteen DQs (DQ 0~DQ 15).
3. ECClogSector: ECC error position address that selects one of the 2nd word and LSB of the 3rd word of spare area. Refer to the below table.
ECClogSector Information [5:4]
4. ECCposWord, ECCposIO and ECClogSector are updated in boot loading operation, too.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000)
ECClogSector1
ECCposIO1
ECClogSector
Error Position
00
2nd word
01
3rd word
10, 11
Reserved
7.26 NAND Flash Write Protection Status (R): F24Eh, default=0002h
US
(Unlocked Status):
’1’ value of this bit specifies that the current block in NAND Flash is unlocked.
LS
(Locked Status):
’1’ value of this bit specifies that the current block in NAND Flash is in locked status.
LTS
(Lock-tighten Status):
’1’ value of this bit specifies that current block in NAND Flash is lock-tighten.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000000)
US
LS
LTS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG2816U1M-PIB | OneNAND SPECIFICATION |
| KFG2816U1M-PID | OneNAND SPECIFICATION |
| KFG2816D1M-DEB | OneNAND SPECIFICATION |
| KFG2816D1M-DED | OneNAND SPECIFICATION |
| KFG2816D1M-DIB | OneNAND SPECIFICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG2816U1M-PIB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2816U1M-PID | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND SPECIFICATION |
| KFG2G1612M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG2G1612M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG2G16D2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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