參數(shù)資料
型號: KFH2G16U2M-DID5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 111/125頁
文件大?。?/td> 1657K
代理商: KFH2G16U2M-DID5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
111
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
NOTES:
1. AA = Address of address register
CA = Address of command register
PCD = Program Command
PMA = Address of memory to be programmed
BA = Address of BufferRAM to load the data
BD = Program Data
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Program Command Sequence (last two cycles)
A0:A15
WE
CE
CLK
t
DS
t
DH
t
CH
t
WPL
t
CS
t
WPH
t
WC
SA
SA
In
Progress
Complete
AA
DQ0-DQ15
OE
Read Status Data
V
IL
BA
CA
PCD
PMA
BD
t
AH
t
AWES
t
PGM
INT
t
CH
t
CH
t
CS
t
CS
6.9 Program Operation Timing
See AC Characteristics Tables 5.7 and 5.8
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