參數(shù)資料
型號： KFH4G16D2M-DID5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 85/125頁
文件大?。?/td> 1657K
代理商： KFH4G16D2M-DID5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
85
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
The Erase Suspend/Erase Resume Commands interrupt and restart a Block Erase or Multi-Block Erase operation so that user may
perform another urgent operation on the block that is not being designated by Erase/Multi-Block Erase Operation.
Erase Suspend During a Block Erase Operation
When Erase Suspend command is written during a Block Erase or Multi-Block Erase operation, the device requires a maximum of
500us to suspend erase operation. Erase Suspend Command issue during Block Address latch sequence is prohibited.
After the erase operation has been suspended, the device is ready for the next operation including a load, program, copy-back
program, Lock, Unlock, Lock-tight, Hot Reset, NAND Flash Core Reset, Command Based Reset, Multi-Block Erase Read Verify, or
OTP Access.
The subsequent operation can be to any block that was NOT being erased.
A special case arises pertaining Erase Suspend to the OTP. A Reset command is used to exit from the OTP Access mode. If the
Reset-triggered exit from the OTP Access Mode happens during an Erase Suspend Operation, the erase routine could fail. Therefore
to exit from the OTP Access Mode without suspending the erase operation stop, a 'NAND Flash Core Reset' command should be
issued.
For the duration of the Erase Suspend period the following commands are not accepted:
Block Erase/Multi-Block Erase/Erase Suspend
Erase Suspend and Erase Resume Operation Flow Chart
Start
Write ’Erase Suspend
Command’
Add: F220h DQ=00B0h
Wait for INT register
low to high transition for 500us
Add: F241h DQ=[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’Erase Resume
Command’
Add: F220h DQ=0030h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Another Operation
*
* Another Operation ; Load, Program
Copy-back Program, OTP Access
2)
,
Hot Reset, Flash Reset, CMD Reset,
Multi Block Erase Verify, Lock,
Lock-tight, Unlock
Check Controller Status Register
in case of Block Erase
Do Multi Block Erase Verify Read
in case of Multi Block Erase
2) If OTP access mode exit happens with Reset operation during Erase Suspend mode,
Reset operation could hurt the erase operation. So if a user wants to exit from OTP access mode
without the erase operation stop, Reset NAND Flash Core command should be used.
Note 1) Erase Suspend command input is prohibited during Multi Block Erase address latch period.
3.10.4 Erase Suspend / Erase Resume Operation
相關(guān)PDF資料
PDF描述
KFH4G16D2M-DID6 FLASH MEMORY(54MHz)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFH4G16D2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH4G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFH4G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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KFH4G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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