- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373129 > KFW1G16D2M-DIB5 (SAMSUNG SEMICONDUCTOR CO. LTD.) FLASH MEMORY(54MHz) PDF資料下載
參數(shù)資料
| 型號(hào)： | KFW1G16D2M-DIB5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(54MHz) |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁(yè)數(shù)： | 122/125頁(yè) |
| 文件大?。?/td> | 1657K |
| 代理商： | KFW1G16D2M-DIB5 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)當(dāng)前第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
122
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
One of the best features OneNAND has is that it can be a booting device itself since it contains an internally built-in boot loader
despite the fact that its core architecture is based on NAND Flash. Thus, OneNAND does not make any additional booting device
necessary for a system, which imposes extra cost or area overhead on the overall system.
As the system power is turned on, the boot code originally stored in NAND Flash Arrary is moved to BootRAM automatically and then
fetched by CPU through the same interface as SRAM’s or NOR Flash’s if the size of the boot code is less than 1KB. If its size is larger
than 1KB and less than or equal to 3KB, only 1KB of it can be moved to BootRAM automatically and fetched by CPU, and the rest of
it can be loaded into one of the DataRAMs whose size is 2KB by Load Command and CPU can take it from the DataRAM after finish-
ing the code-fetching job for BootRAM. If its size is larger than 3KB, the 1KB portion of it can be moved to BootRAM automatically
and fetched by CPU, and its remaining part can be moved to DRAM through two DataRAMs using dual buffering and taken by CPU
to reduce CPU fetch time.
A typical boot scheme usually used to boot the system with OneNAND is explained at Patition of NAND Flash Array and OneNAND
Boot Sequence. In this boot scheme, boot code is comprised of BL1, where BL stands for Boot Loader, BL2, and BL3. Moreover, the
size of the boot code is larger than 3KB (the 3rd case above). BL1 is called primary boot loader in other words. Here is the table of
detailed explanations about the function of each boot loader in this specific boot scheme.
Boot Loaders in OneNAND
NAND Flash Array of OneNAND is divided into the partitions as described at Partition of NAND Flash Array to show where each
component of code is located and how much portion of the overall NAND Flash Array each one occupies. In addition, the boot
sequence is listed below and depicted at Boot Sequence.
Boot Loader
Description
BL1
Moves BL2 from NAND Flash Array to DRAM through two DataRAMs using dual buffering
BL2
Moves OS image (or BL3 optionally) from NAND Flash Array to DRAM through two DataRams using dual buffering
BL3 (Optional)
Moves or writes the image through USB interface
7.2.1 Boot Loaders in OneNAND
Boot Sequence :
1. Power is on
BL1 is loaded into BootRAM
2. BL1 is executed in BootRAM
BL2 is loaded into DRAM through two DataRams using dual buffering by BL1
3. BL2 is executed in DRAM
OS image is loaded into DRAM through two DataRams using dual buffering by BL2
4. OS is running
7.2.2 Boot Sequence
7.2 Boot Sequence
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFW1G16D2M-DIB6 | FLASH MEMORY(54MHz) |
| KFW1G16D2M-DID5 | FLASH MEMORY(54MHz) |
| KFW1G16D2M-DID6 | FLASH MEMORY(54MHz) |
| KFW1G16Q2M-DEB5 | FLASH MEMORY(54MHz) |
| KFG1G16U2M-DEB | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFW1G16D2M-DIB6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW1G16D2M-DID5 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW1G16D2M-DID6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW1G16Q2M-DEB5 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFW1G16Q2M-DEB6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(66MHz) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。