參數(shù)資料
型號: KFW1G16D2M-DIB5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 46/125頁
文件大?。?/td> 1657K
代理商: KFW1G16D2M-DIB5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
46
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased.
F100h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DFS
Reserved(00000)
FBA
Device
Number of Block
FBA
2Gb DDP
2048
DFS[15] & FBA[9:0]
1Gb
1024
FBA[9:0]
Start Address1 Information
Register Information
Description
FBA
NAND Flash Block Address
DFS
Flash Core of DDP (Device Flash Core Select)
2.8.10 Start Address2 Register F101h (R/W)
This Read/Write register describes the BufferRAM of DDP (Device BufferRAM Select)
F101h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DBS
Reserved(000000000000000)
Start Address2 Information
Register Information
Description
DBS
BufferRAM of DDP (Device BufferRAM Select)
Comp
Comp
DBS
DFS
DDP_OPT
GND
CE
C
L
SRAM
BUFFER
FLASH
CORE
Comp
Comp
DBS
DFS
DDP_OPT
V
DD
CE
C
L
SRAM
BUFFER
FLASH
CORE
CE
INT
CHIP 1
CHIP 2
INT
INT
2.8.9 Start Address1 Register F100h (R/W)
相關(guān)PDF資料
PDF描述
KFW1G16D2M-DIB6 FLASH MEMORY(54MHz)
KFW1G16D2M-DID5 FLASH MEMORY(54MHz)
KFW1G16D2M-DID6 FLASH MEMORY(54MHz)
KFW1G16Q2M-DEB5 FLASH MEMORY(54MHz)
KFG1G16U2M-DEB FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFW1G16D2M-DIB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFW1G16D2M-DID5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFW1G16D2M-DID6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFW1G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFW1G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(66MHz)