- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373153 > KM416C1000B (SAMSUNG SEMICONDUCTOR CO. LTD.) 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode PDF資料下載
參數(shù)資料
| 型號： | KM416C1000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 100萬× 16的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 84K |
| 代理商： | KM416C1000B |
KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
t
DS
0
0
0
ns
8,16
Data hold time
t
DH
t
REF
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPT
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
RASS
t
RPS
t
CHS
10
10
15
ns
8,16
Refresh period (1K, Normal)
16
16
16
ms
Refresh period (4K, Normal)
64
64
64
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
0
0
0
ns
6
CAS to W delay time
36
40
50
ns
6,12
RAS to W delay time
73
85
95
ns
6
Column address to W delay time
48
55
60
ns
6
CAS precharge to W delay time
53
60
65
ns
6
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
14
CAS hlod time (CAS -before-RAS refresh)
10
10
15
ns
15
RAS to CAS precharge time
5
5
5
ns
CAS precharge time (CBR counter test cycle)
20
20
25
ns
Access time from CAS precharge
30
35
40
ns
3
Fast Page mode cycle time
35
40
45
ns
Fast Page read-modify-write cycle time
76
80
95
ns
CAS precharge time (Fast Page cycle)
10
10
10
ns
11
RAS pulse width (Fast Page cycle)
50
200K
60
200K
70
200K
ns
RAS hold time from CAS precharge
30
35
40
ns
OE access time
13
15
20
ns
3
OE to data delay
13
15
20
ns
Output buffer turn off delay time from OE
0
13
0
15
0
20
ns
OE command hold time
13
15
20
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
17
RAS precharge time (C-B-R self refresh)
90
110
130
ns
17
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416V1000B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1200B | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1200C | 12.4K OHM 1% 1/2W M/F LEADED RESISTOR |
| KM416C1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V1000C | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C1000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C1004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
| KM416C1004C-6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
發(fā)布緊急采購，3分鐘左右您將得到回復。