參數(shù)資料
型號(hào): KM416C1000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
中文描述: 100萬× 16的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁面模式
文件頁數(shù): 8/8頁
文件大小: 84K
代理商: KM416C1000B
KM416C1000B, KM416C1200B
KM416V1000B, KM416V1200B
CMOS DRAM
t
ASC
,
t
CAH
are referenced to the earlier CAS rising edge.
t
CP
is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.
t
CWD
is referenced to the later CAS falling edge at word read-modify-write cycle.
t
CWL
is specified from W falling edge to the earlier CAS rising edge.
t
CSR
is referenced to earlier CAS falling low before RAS transition low.
t
CHR
is referenced to the later CAS rising high after RAS transition low.
t
CSR
t
CHR
RAS
LCAS
UCAS
16.
15.
14.
11.
13.
12.
17.
t
DS,
t
DH
is independently specified for lower byte D
IN
(0-7), upper byte D
IN
(8-15)
4096(4K Ref.)/1024(1K Ref.) of burst refresh must be executed within 16ms before and after self-refresh in order to meet
refresh specification (L-version).
10.
相關(guān)PDF資料
PDF描述
KM416V1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1200C 12.4K OHM 1% 1/2W M/F LEADED RESISTOR
KM416C1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416V1000C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416C1000C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
KM416C1004C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C-45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C-5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out
KM416C1004C-6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out