參數(shù)資料
型號(hào)： KM416L8031BT-G(F)Z
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DDR SDRAM Specification Version 0.61
中文描述： DDR SDRAM的規(guī)格版本0.61
文件頁(yè)數(shù)： 21/53頁(yè)
文件大?。?/td> 669K
代理商： KM416L8031BT-G(F)Z
- 21 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.2 Burst Write Operation
The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising
edge of the clock(CK). The address inputs determine the starting column address. There is no write latency
relative to DQS required for burst write cycle. The first data of a burst write cycle must be applied on the DQ
pins tDS(Data-in setup time) prior to data strobe edge enabled after tDQSS from the rising edge of the
clock(CK) that the write command is issued. The remaining data inputs must be supplied on each subsequent
falling and rising edge of Data Strobe until the burst length is completed. When the burst has been finished, any
additional data supplied to the DQ pins will be ignored.
Figure 10. Burst write operation timing
1. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown
(DQS going from High_Z to logic Low) applies when no writes were previously in progress on the bus.
If a previous write was in progress, DQS could be High at this time, depending on tDQSS.
*1
Command
< Burst Length=4 >
NOP
WRITEA
NOP
NOP
NOP
WRITEB
NOP
NOP
NOP
DQS
DQ
′
s
Din 3
Din 0 Din 1
Din 2
t
DQSSmax
2
0
1
5
3
4
8
6
7
t
WPRES*1
CK
CK
Din 3
Din 0
Din 1
Din 2
*1
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416L8031BT-GFZ/Y/0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61
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KM416RD16AD 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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