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參數(shù)資料
| 型號(hào)： | KM416L8031BT-G(F)Z |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Specification Version 0.61 |
| 中文描述： | DDR SDRAM的規(guī)格版本0.61 |
| 文件頁數(shù)： | 30/53頁 |
| 文件大?。?/td> | 669K |
| 代理商： | KM416L8031BT-G(F)Z |
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- 30 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.12 Write with Auto Precharge
If A10 is high when write command is issued , the write with auto-precharge function is performed. Any new
command to the same bank should not be issued until the internal precharge is completed. The internal pre-
charge begins after keeping tWR(min).
Command
< Burst Length=4 >
BANK A
ACTIVE
NOP
WRITE A
Auto Precharge
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
Din 0 Din 1 Din 2
Din 3
* completion of
t
RP
t
WR
t
RP
Internal precharge start
2
0
1
5
3
4
8
6
7
CK
CK
Figure 20. Write with auto precharge timing
Asserted
command
For same Bank
For Different Bank
3
4
5
6
7
8
3
4
5
6
7
WRITE
WRITE+
No AP
*1
WRITE+
No AP
WRITE+
No AP
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
WRITE+
AP
WRITE+
AP
WRITE+
AP
WRITE+
AP
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
READ
Illegal
READ+NO
AP+DM
*2
READ+NO
AP+DM
READ+
NO AP
READ+
NO AP
Illegal
Illegal
Illegal
Legal
Legal
Legal
READ+AP
Illegal
READ +
AP+DM
READ +
AP+DM
READ +
AP
READ +
AP
Illegal
Illegal
Illegal
Legal
Legal
Legal
Active
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
Precharge
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Legal
*1
: AP = Auto Precharge
*2
: DM : Refer to "
3.3.7 Write Interrupted by a Read & DM "
in page 25.
Table 7. Operating description when new command asserted
while write with auto precharge is issued
Burst length = 4
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| KM44L32031BT-G(L)0 | DDR SDRAM Specification Version 1.0 |
| KM48L16031BT-G(L)0 | DDR SDRAM Specification Version 1.0 |
| KM416L8031BT-G(L)0 | DDR SDRAM Specification Version 1.0 |
| KM44L32031BT-G(L)Y | DDR SDRAM Specification Version 1.0 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416L8031BT-GFZ/Y/0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 0.61 |
| KM416L8031BT-GLZ/Y/0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 1.0 |
| KM416RD16AC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD16AD | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD16C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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