參數資料
型號: KM416L8031BT-G(L)0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Specification Version 1.0
中文描述: DDR SDRAM的規(guī)范版本1.0
文件頁數: 32/53頁
文件大?。?/td> 669K
代理商: KM416L8031BT-G(L)0
- 32 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.14 Power down
CKE
Precharge
Active
Active
power
down
Exit
Read
Active
power
down
Entry
power
down
Entry
Precharge
Command
CK
CK
The power down mode is entered when CKE is low and exited when CKE is high. Once the power down
mode is initiated, all of the receiver circuits except clock, CKE and DLL circuit tree are gated off to reduce
power consumption. All banks should be in idle state prior to entering the precharge power down mode and
CKE should be set high at least 1tck+tIS prior to row active command . During power down mode, refresh
operations cannot be performed, therefore the device cannot be remained in power down mode longer than
the refresh period(Data retension time) of the device.
Figure 23. Power down entry and exit timing
相關PDF資料
PDF描述
KM44L32031BT-G(L)Y DDR SDRAM Specification Version 1.0
KM48S2020C 1M x 8Bit x 2 Banks Synchronous DRAM(1M x 8位 x 2組同步動態(tài)RAM)
KM48S8020B 4M x 8Bit x 2 Banks Synchronous DRAM(4M x 8位 x 2組同步動態(tài)RAM)
KM48S8030D 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S8030 2M x 8Bit x 4 Banks Synchronous DRAM
相關代理商/技術參數
參數描述
KM416L8031BT-GLZ/Y/0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 1.0
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KM416RD16AD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD16C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD16D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM