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參數(shù)資料
| 型號： | KM432S2030C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 200萬× 32內(nèi)存為512k × 32 × 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 3/43頁 |
| 文件大?。?/td> | 1161K |
| 代理商： | KM432S2030C |
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KM432S2030C
CMOS SDRAM
REV. 1.1 Mar. '99
- 3 -
The KM432S2030C is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,
fabricated with SAMSUNG
′
s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same device
to be useful for a variety of high bandwidth, high performance
memory system applications.
3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock
Burst read single-bit write operation
DQM for masking
Auto & self refresh
15.6us refresh duty cycle
GENERAL DESCRIPTION
FEATURES
512K x 32Bit x 4 Banks Synchronous DRAM
ORDERING INFORMATION
Part NO.
KM432S2030CT-G/F6
KM432S2030CT-G/F7
KM432S2030CT-G/F8
KM432S2030CT-G/F10
Max Freq.
166MHz
143MHz
125MHz
100MHz
Interface
Package
LVTTL
86
TSOP(II)
FUNCTIONAL BLOCK DIAGRAM
Samsung Electronics reserves the right to
change products or specification without
notice.
*
Bank Select
Data Input Register
512K x 32
512K x 32
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
512K x 32
512K x 32
Timing Register
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM432S2030CT-F6 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F7 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F8 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-G10 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-G6 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM432S2030CT-F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CTG10 | 制造商:SAMSUNG 功能描述:* |
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