| 型號 | 廠商 | 描述 |
| km416s4031b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動態(tài)RAM（帶SSTL接口）) |
| km416s4031c 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動態(tài)RAM（帶SSTL接口）) |
| km416s8030bn 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| km416s8030b 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| km416s8030 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 16Bit x 4 Banks Synchronous DRAM |
| km416v1004a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1004a-6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1004a-7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1004a-8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1004a-f6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1004a-f7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1004a-f8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | RES, MF, 150, 1/4W, 1% |
| km416v1004a-l6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1004a-l7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1004a-l8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| km416v1204bj 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT |
| km416v4000b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| km416v4100c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動態(tài)RAM(帶快速頁模式)) |
| km416v4000c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16位 CMOS動態(tài)RAM(帶快速頁模式)) |
| km416v4104b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| km416v4104c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| km416v4104cs-45 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| km41c16000c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| km41v16000c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16M x1Bit CMOS Dynamic RAM with Fast Page Mode(16M x1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| km41c4000d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 1Bit CMOS Dynamic RAM with Fast Page Mode(4M x 1位 CMOS動態(tài)RAM(帶快速頁模式)) |
| km4200ic8 2 3 4 5 6 7 8 9 10 11 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| km4200ic8tr3 2 3 4 5 6 7 8 9 10 11 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| km4200 2 3 4 5 6 7 8 9 10 11 |
Fairchild Semiconductor Corporation | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| km4200im8 2 3 4 5 6 7 8 9 10 11 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| km4200im8tr3 2 3 4 5 6 7 8 9 10 11 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, Low Cost, +2.7V & +5V, 260MHz Rail-to-Rail Amplifier |
| km4210im8 2 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, 0.5mA, Low Cost, +2.7V and %V, 75MHz Rail-to-Rail Amplifier |
| km4210 2 |
Fairchild Semiconductor Corporation | Dual, 0.5mA, Low Cost, +2.7V and %V, 75MHz Rail-to-Rail Amplifier |
| km4210im8tr3 2 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, 0.5mA, Low Cost, +2.7V and %V, 75MHz Rail-to-Rail Amplifier |
| km4232w259a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | CMOS Window RAM（1M Byte Dual Ported DRAM Array）(CMOS視窗RAM（1M字節(jié)的雙口動態(tài)RAM陣列）) |
| km4270ic8 2 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, Low Cost, +2.7V and +5V, Rail-to-Rail I/O Amplifier |
| km4270ic8tr3 2 |
FAIRCHILD SEMICONDUCTOR CORP | Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers |
| km4270 2 |
Fairchild Semiconductor Corporation | XTAL MTL SMT HC49/USM |
| km4270im8tr3 2 |
FAIRCHILD SEMICONDUCTOR CORP | Dual, Low Cost, +2.7V and +5V, Rail-to-Rail I/O Amplifier |
| km4270im8 2 |
FAIRCHILD SEMICONDUCTOR CORP | RESISTOR, 1%, 6.04K OHM, MTL FILM |
| km432d5131 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe(128K x 32位 x 4 組雙速率同步圖形RAM帶雙向數據選通) |
| km432s2020b 2 3 4 5 6 7 8 9 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 32Bit x 2 Banks Synchronous DRAM(1M x 32位 x 2 組同步動態(tài)RAM) |
| km432s2030c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| km432s2030ct-f6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| km432s2030ct-f7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| km432s2030ct-f8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| km432s2030ct-g10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| km432s2030ct-g6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| km432s2030ct-g7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| km432s2030ct-g8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| km432s2030ct-f10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |