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參數(shù)資料
| 型號(hào)： | KM44C4004C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| 中文描述： | 4米× 4位的擴(kuò)展數(shù)據(jù)輸出的CMOS動(dòng)態(tài)RAM（4米× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶擴(kuò)展數(shù)據(jù)輸出）） |
| 文件頁(yè)數(shù)： | 5/21頁(yè) |
| 文件大?。?/td> | 366K |
| 代理商： | KM44C4004C |
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KM44C4004C, KM44C4104C
KM44V4004C, KM44V4104C
CMOS DRAM
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ3]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
-6
Units
Notes
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
84
104
ns
Read-modify-write cycle time
116
140
ns
Access time from RAS
t
RAC
t
CAC
50
60
ns
3,4,10
Access time from CAS
13
15
ns
3,4,5
Access time from column address
t
AA
t
CLZ
25
30
ns
3,10
CAS to output in Low-Z
3
3
ns
3
Output buffer turn-off delay from CAS
t
CEZ
3
13
3
15
ns
6,14
OE to output in Low-Z
t
OLZ
t
T
3
3
ns
3
Transition time (rise and fall)
2
50
2
50
ns
2
RAS precharge time
t
RP
t
RAS
30
40
ns
RAS pulse width
50
10K
60
10K
ns
RAS hold time
t
RSH
t
CSH
13
15
ns
CAS hold time
38
45
ns
CAS pulse width
t
CAS
t
RCD
8
10K
10
10K
ns
RAS to CAS delay time
20
37
20
45
ns
4
RAS to column address delay time
t
RAD
t
CRP
15
25
15
30
ns
10
CAS to RAS precharge time
5
5
ns
Row address set-up time
t
ASR
t
RAH
0
0
ns
Row address hold time
10
10
ns
Column address set-up time
t
ASC
t
CAH
0
0
ns
Column address hold time
8
10
ns
Column address to RAS lead time
t
RAL
t
RCS
25
30
ns
Read command set-up time
0
0
ns
Read command hold time referenced to CAS
t
RCH
t
RRH
0
0
ns
8
Read command hold time referenced to RAS
0
0
ns
8
Write command hold time
t
WCH
t
WP
10
10
ns
Write command pulse width
10
10
ns
Write command to RAS lead time
t
RWL
t
CWL
13
15
ns
Write command to CAS lead time
8
10
ns
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
相關(guān)PDF資料 |
PDF描述 |
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| KM44V4004C | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM44V4104C | 4M x 4Bit CMOS Dynamic RAM with Extended Data Out(4M x 4位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44C4004CS6 | 制造商:SAMSUNG 功能描述:* |
| KM44C4005C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
| KM44C4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44C4103C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode |
| KM44C4103CK-6 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip FPM 16M-Bit 4Mx4 5V 28-Pin SOJ |
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