- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373157 > KM44V1000D (SAMSUNG SEMICONDUCTOR CO. LTD.) 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM44V1000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| 中文描述： | 100萬(wàn)x 4位與快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM（3米× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁(yè)模式）） |
| 文件頁(yè)數(shù)： | 6/21頁(yè) |
| 文件大小： | 354K |
| 代理商： | KM44V1000D |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)當(dāng)前第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)
KM44C1000D, KM44V1000D
CMOS DRAM
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 2)
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
t
DS
t
DH
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPT
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
RASS
t
RPS
t
CHS
0
0
0
ns
9
Data hold time
10
10
15
ns
9
Refresh period (Normal)
16
16
16
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
0
0
0
ns
7
CAS to W delay time
37
37
47
ns
7
RAS to W delay time
72
82
97
ns
7
Column address to W delay time
47
52
62
ns
7
CAS precharge to W delay time
52
57
67
ns
7
CAS set-up time (CAS-before-RAS refresh)
10
10
10
ns
CAS hold time (CAS-before-RAS refresh)
10
10
15
ns
RAS to CAS precharge time
5
5
5
ns
CAS precharge time (C-B-R counter test cycle)
20
20
25
ns
Access time from CAS precharge
30
35
40
ns
3
Fast Page mode cycle time
35
40
45
ns
Fast Page read-modify-write cycle time
77
82
97
ns
CAS precharge time (Fast Page cycle)
10
10
10
ns
RAS pulse width (Fast Page cycle)
50
200K
60
200K
70
200K
ns
RAS hold time from CAS precharge
30
35
40
ns
OE access time
15
15
20
ns
OE to data delay
12
12
17
ns
Out put buffer turn off delay time from OE
0
12
0
12
0
17
ns
6
OE command hold time
15
15
20
ns
Write command set-up time (Test mode in)
10
10
10
ns
Write command hold time (Test mode in)
10
10
10
ns
W to RAS precharge time (C-B-R refresh)
10
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
10
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
14,15,16
RAS precharge time (C-B-R self refresh)
90
110
130
ns
14,15,16
CAS Hold time (C-B-R self refresh)
-50
-50
-50
ns
14,15,16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44V16000B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| KM44V16100B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| KM44V16100C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| KM44V16000C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式)) |
| KM48C2000B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。