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參數(shù)資料
| 型號(hào)： | KM44V1000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode(1M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 100萬x 4位與快速頁面模式的CMOS動(dòng)態(tài)RAM（3米× 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁模式）） |
| 文件頁數(shù)： | 7/21頁 |
| 文件大?。?/td> | 354K |
| 代理商： | KM44V1000D |
KM44C1000D, KM44V1000D
CMOS DRAM
TEST MODE CYCLE
( Note 11 )
Note) *1 : t
CAC
=20ns@3.3V device / 18ns@5V device
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
95
115
135
ns
Read-modify-write cycle time
t
RWC
138
160
190
ns
Access time from RAS
t
RAC
55
65
75
ns
3,4,10
Access time from CAS
t
CAC
*1
t
AA
20/18
*1
30
20
25
ns
3,4,5
Access time from column address
35
40
ns
3,10
RAS pulse width
t
RAS
55
10K
65
10K
75
10K
ns
CAS pulse width
t
CAS
18
10K
20
10K
25
10K
ns
RAS hold time
t
RSH
18
20
25
ns
CAS hold time
t
CSH
55
65
75
ns
Column Address to RAS lead time
t
RAL
30
35
40
ns
CAS to W delay time
t
CWD
41
45
55
ns
7
RAS to W delay time
t
RWD
78
90
105
ns
7
Column Address to W delay time
t
AWD
53
60
70
ns
7
Fast Page mode cycle time
t
PC
40
45
50
ns
Fast Page mode read-modify-write cycle time
t
PRWC
81
90
105
ns
RAS pulse width (Fast Page cycle)
t
RASP
55
200K
65
200K
75
200K
ns
Access time from CAS precharge
t
CPA
35
40
45
ns
3
OE access time
t
OEA
t
OED
t
OEH
20
20
25
ns
OE to data delay
18
20
25
ns
OE command hold time
18
20
25
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM44V16000B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM44V16100B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM44V16100C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM44V16000C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM48C2000B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
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