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參數(shù)資料
| 型號(hào)： | KM44V16000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 16米x 4位與快速頁面模式的CMOS動(dòng)態(tài)RAM（1,600 × 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁模式）） |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 344K |
| 代理商： | KM44V16000C |
KM44V16000C,KM44V16100C
CMOS DRAM
This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are
optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Fur-
thermore, Self-refresh operation is available in L-version. This 16Mx4 Fast Page Mode DRAM family is fabricated using Samsung
′
s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
Part Identification
- KM44V16000C/C-L(3.3V, 8K Ref.)
- KM44V16100C/C-L(3.3V, 4K Ref.)
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
Fast parallel test mode capability
LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
+3.3V
±
0.3V power supply
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Memory Array
16,777,216 x 4
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
L-ver
KM44V16000C*
KM44V16100C
8K
4K
64ms
128ms
Performance Range
Speed
-45
-5
-6
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
80ns
90ns
110ns
t
PC
31ns
35ns
40ns
Active Power Dissipation
Speed
-45
-5
-6
8K
324
288
252
4K
432
396
360
Unit : mW
S
Data out
Buffer
DQ0
to
DQ3
Data in
Buffer
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
OE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM48C2000B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48C2100B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48V2000B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48V2100B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48C2100C | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
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