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參數(shù)資料
| 型號： | KM44V16000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 16米x 4位與快速頁面模式的CMOS動態(tài)RAM（1,600 × 4位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 321K |
| 代理商： | KM44V16000B |
KM44V16000B,
KM44V16100B
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-45
-5
-6
Units
Note
Min
Max
Min
Max
Min
Max
Refresh period (Normal)
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
RASS
t
RPS
t
CHS
64
64
64
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
0
0
0
ns
7
CAS to W delay time
32
36
38
ns
7
RAS to W delay time
67
73
83
ns
7
Column address to W delay time
43
48
53
ns
7
CAS precharge W delay time
48
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
CAS hold time (CAS -before-RAS refresh)
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
Access time from CAS precharge
26
30
35
ns
3
Fast Page mode cycle time
31
35
40
ns
Fast Page mode read-modify-write cycle time
70
76
85
ns
CAS precharge time (Fast page cycle)
9
10
10
ns
RAS pulse width (Fast page cycle)
45
200K
50
200K
60
200K
ns
RAS hold time from CAS precharge
28
30
35
ns
OE access time
12
13
15
ns
OE to data delay
12
13
13
ns
Output buffer turn off delay time from OE
0
13
0
13
0
13
ns
6
OE command hold time
12
13
15
ns
Write command set-up time (Test mode in)
10
10
10
ns
11
Write command hold time (Test mode in)
15
15
15
ns
11
W to RAS precharge time (C-B-R refresh)
10
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
10
ns
RAS pulse width (C-B-R self refresh)
100
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
80
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
-50
-50
-50
ns
13,14,15
相關PDF資料 |
PDF描述 |
|---|---|
| KM44V16100B | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16100C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM44V16000C | 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM48C2000B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48C2100B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM44V4000AS-6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 4M x 4, 26 Pin, Plastic, TSOP |
| KM44V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM44V4100AT-7 | 制造商:Samsung Semiconductor 功能描述: |
| KM44V4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| KM470M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
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