參數(shù)資料
型號(hào): KM44V16100C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 4Bit CMOS Dynamic RAM with Fast Page Mode(16M x 4位CMOS 動(dòng)態(tài)RAM(帶快速頁(yè)模式))
中文描述: 16米x 4位與快速頁(yè)面模式的CMOS動(dòng)態(tài)RAM(1,600 × 4位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器(帶快速頁(yè)模式))
文件頁(yè)數(shù): 4/20頁(yè)
文件大?。?/td> 344K
代理商: KM44V16100C
KM44V16000C,KM44V16100C
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=CAS-before-RAS cycling or 0.2V,
W, OE=V
IH
, Address=Don
t care, DQ=Open, T
RC
=31.25us
I
CCS
: Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=V
CC
-0.2V or 0.2V, DQ0 ~ DQ3=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM44V16000C
KM44V16100C
I
CC1
Don
t care
-45
-5
-6
90
80
70
120
110
100
mA
mA
mA
I
CC2
Normal
L
Don
t care
1
1
1
1
mA
mA
I
CC3
Don
t care
-45
-5
-6
90
80
70
120
110
100
mA
mA
mA
I
CC4
Don
t care
-45
-5
-6
70
60
50
70
60
50
mA
mA
mA
I
CC5
Normal
L
Don
t care
500
200
500
200
uA
uA
I
CC6
Don
t care
-45
-5
-6
120
110
100
120
110
100
mA
mA
mA
I
CC7
L
Don
t care
350
350
uA
I
CCS
L
Don
t care
350
350
uA
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