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參數(shù)資料
| 型號： | KM48C2000B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 200萬× 8位的CMOS動態(tài)隨機存儲器的快速頁面模式 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | KM48C2000B |
KM48C2000B, KM48C2100B
KM48V2000B, KM48V2100B
CMOS DRAM
CAPACITANCE
(T
A
=25
é
, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ7]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
0.3V, Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
90
110
130
ns
Read-modify-write cycle time
t
RWC
t
RAC
133
155
185
ns
Access time from RAS
50
60
70
ns
3,4,9
Access time from CAS
t
CAC
t
AA
13
15
20
ns
3,4
Access time from column address
25
30
35
ns
3,9
CAS to output in Low-Z
t
CLZ
t
OFF
0
0
0
ns
3
Output buffer turn-off delay
0
13
0
15
0
20
ns
5
Transition time (rise and fall)
t
T
t
RP
3
50
3
50
3
50
ns
2
RAS precharge time
30
40
50
ns
RAS pulse width
t
RAS
t
RSH
50
10K
60
10K
70
10K
ns
RAS hold time
13
15
20
ns
CAS hold time
t
CSH
t
CAS
50
60
70
ns
CAS pulse width
13
10K
15
10K
20
10K
ns
RAS to CAS delay time
t
RCD
t
RAD
20
37
20
45
20
50
ns
4
RAS to column address delay time
15
25
15
30
15
35
ns
9
CAS to RAS precharge time
t
CRP
t
ASR
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
t
RAH
t
ASC
10
10
10
ns
Column address set-up time
0
0
0
ns
Column address hold time
t
CAH
t
RAL
10
10
15
ns
Column address to RAS lead time
25
30
35
ns
Read command set-up time
t
RCS
t
RCH
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
7
Read command hold time referenced to RAS
t
RRH
t
WCH
0
0
0
ns
7
Write command hold time
10
10
15
ns
Write command pulse width
t
WP
t
RWL
10
10
15
ns
Write command to RAS lead time
13
15
20
ns
Write command to CAS lead time
t
CWL
13
15
20
ns
AC CHARACTERISTICS
(0
é
T
A
70
é
, See note 1,2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM48C2100B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48V2000B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48V2100B | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48C2100C | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
| KM48V2000C | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動態(tài)RAM(帶快速頁模式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM48C2100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
| KM48C8004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48C8100AS-60 | 制造商:Samsung Semiconductor 功能描述: |
| KM48C8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM-48F 50UA DC | 制造商:Fujita Electric 功能描述: |
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