參數(shù)資料
型號: KM48C2000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
中文描述: 200萬× 8位的CMOS動態(tài)隨機存儲器的快速頁面模式
文件頁數(shù): 7/8頁
文件大?。?/td> 79K
代理商: KM48C2000B
KM48C2000B, KM48C2100B
KM48V2000B, KM48V2100B
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
RAS
t
CAS
t
RSH
t
CSH
t
RAL
t
CWD
t
RWD
t
AWD
t
CPWD
t
PC
t
PRWC
t
RASP
t
CPA
t
OEA
t
OED
t
OEH
95
115
135
ns
Read-modify-write cycle time
138
160
190
ns
Access time from RAS
55
65
75
ms
3,4,9
Access time from CAS
18
20
25
ms
3,4
Access time from column address
30
35
40
ms
3,9
RAS pulse width
55
10K
65
10K
75
10K
ns
CAS pulse width
18
10K
20
10K
25
10K
ns
RAS hold time
18
20
25
ns
CAS hold time
55
65
75
ns
Column address to RAS lead time
30
35
40
ns
CAS to W delay time
41
45
55
ns
6
RAS to W delay time
78
90
105
ns
6
Column address to W delay time
53
60
70
ns
6
CAS precharge to W delay timerefresh)
58
65
75
ns
6
Fast Page mode cycle time
40
45
50
ns
Fast Page read-modify-write cycle time
81
90
105
ns
RAS pulse width (Fast Page cycle)
55
200K
65
200K
75
200K
ns
Access time from CAS precharge
35
40
45
ns
3
OE access time
18
20
25
ns
OE to data delay
18
20
25
ns
OE command hold time
18
20
25
ns
( Note 10, 11 )
相關(guān)PDF資料
PDF描述
KM48C2100B 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
KM48V2000B 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
KM48V2100B 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
KM48C2100C 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動態(tài)RAM(帶快速頁模式))
KM48V2000C 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8位CMOS 動態(tài)RAM(帶快速頁模式))
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