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參數(shù)資料
| 型號： | KM48C512D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode(高速512K x 8位 CMOS 動態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 高速的CMOS為512k × 8位動態(tài)隨機存儲器與快速頁面模式（高速為512k × 8位的CMOS動態(tài)隨機存儲器（帶快速頁模式）） |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 346K |
| 代理商： | KM48C512D |
KM48C512D
CMOS DRAM
High Speed
This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access
of memory cells within the same row. Access time (-4), power consumption(Normal or Low power) and package type(SOJ or TSOP-II)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 512Kx8 EDO Mode DRAM family is fabricated using Samsung
′
s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as main memory unit for microcomputer, personal computer and portable machines.
Part Identification
- KM48C512D/DL (5V, 1K Ref.)
Fast Page Mode operation
Byte Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
TTL compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in 28-pin SOJ 400mil & 28-pin TSOP(II)
400mil packages
Dual +5V
±
10% power supply
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
RAS
CAS
W
Vcc
Vss
DQ0
to
DQ7
A0 ~ A9
A0 ~ A8
Memory Array
524,288 x8
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
16ms
L-ver
128ms
C512D
5V
1K
Perfomance Range
Speed
-4
t
RAC
40ns
t
CAC
12ns
t
RC
75ns
t
PC
28ns
Active Power Dissipation
Speed
-4
Active Power Dissipation
770
Unit : mW
S
Data out
Buffer
Data in
Buffer
OE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM48C8004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48C8100AS-60 | 制造商:Samsung Semiconductor 功能描述: |
| KM48C8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM-48F 50UA DC | 制造商:Fujita Electric 功能描述: |
| KM-48F 0-50MV DC | 制造商:Fujita Electric 功能描述: |
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