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參數(shù)資料
| 型號： | KM616S4000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 137K |
| 代理商： | KM616S4000C |
KM616S4000C Family
CMOS SRAM
Preliminary
Revision 0.01
June 1998
2
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM616S4000C families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support
industrial operating temperature ranges and have small pack-
age types for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology : TFT
Organization : 256K x16
Power Supply Voltage : 2.3~2.7V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 44-TSOP2-400F/R
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9~16
)
A
0
~A
17
Address Inputs
LB
Lower Byte (I/O
1~8
)
I/O
1
~I/O
16
Data Input/Output
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
15
μ
A
Operating
(I
CC2
, Max)
25mA
KM616S4000CLI-L
Industrial(-40~85
°
C)
2.3~2.7V
100
1)
/120
44-TSOP2-F/R
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A12
A12
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
selec
A5 A6 A7 A8 A9
A11
A10
A0
A1
A2
A3
A4
A13
A14
A15
WE
OE
UB
CS
I/O
1
~I/O
8
A16
Data
cont
Data
cont
Data
cont
LB
I/O
9
~I/O
16
Vcc
Vss
A17
A12
Precharge circuit.
Memory array
1024 rows
256
×
16 columns
I/O Circuit
Column select
Control
logic
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