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參數(shù)資料
| 型號： | KM616S4000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài)RAM) |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 137K |
| 代理商： | KM616S4000C |
KM616S4000C Family
CMOS SRAM
Preliminary
Revision 0.01
June 1998
4
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot : V
CC
+1.0V in case of pulse width
≤
20ns
3. Undershoot : -1.0V in case of pulse width
≤
20ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
KM616S4000C Family
2.3
2.5
2.7
V
Ground
Vss
All Family
0
0
0
V
Input high voltage
V
IH
All Family
2.0
-
Vcc+0.3
2)
0.6
V
Input low voltage
V
IL
All Family
-0.3
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IL
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
-1
-
1
μ
A
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
-
-
1
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA CS
≤
0.2V,V
IN
≤
0.2V or
-
-
4
mA
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL
, V
IN
=V
IH
or
-
-
25
mA
Output low voltage
V
OL
I
OL
=0.5mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-0.5mA
2.0
-
-
V
Standby Current(TTL)
I
SB
CS=V
IH
, Other inputs = V
IL
or V
IH
-
-
0.3
mA
Standby Current(CMOS)
I
SB1
CS
≥
Vcc-0.2V, Other inputs=0~Vcc
-
-
15
μ
A
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