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參數(shù)資料
| 型號： | KM616U4010C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 16位低功耗低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 159K |
| 代理商： | KM616U4010C |
KM616U4010C Family
CMOS SRAM
Revision 0.01
August 1998
4
Preliminary
RECOMMENDED DC OPERATING CONDITIONS
1)
Note:
1. T
A
=-40 to 85
°
C, otherwise specified
2. Overshoot: V
CC
+2.0V in case of pulse width
≤
30ns
3. Undershoot: -2.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Product
Min
Typ
Max
Unit
Supply voltage
Vcc
KM616U4010CZ Family
2.7
3.0
3.3
V
Ground
Vss
KM616U4010CZ Family
0
0
0
V
Input high voltage
V
IH
KM616U4010CZ Family
2.2
-
Vcc+0.3
2)
0.6
V
Input low voltage
V
IL
KM616U4010CZ Family
-0.3
3)
-
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IL
=Vss to Vcc
-1
-
1
μ
A
μ
A
Output leakage current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
-1
-
1
Operating power supply current
I
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
-
-
4
mA
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA CS
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
Vcc-0.2V
-
-
6
mA
I
CC2
Cycle time=Min, 100% duty, I
IO
=0mA,
-
-
45
mA
Output low voltage
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
=-1.0mA
2.2
-
V
Standby Current(TTL)
I
SB
CS=V
IH
or LB=UB=V
IH
, Other inputs=V
IH
or V
IL
-
-
0.3
mA
Standby Current(CMOS)
I
SB1
CS
≥
Vcc-0.2V or LB=UB
≥
Vcc-0.2V, CS
≤
0.2V,
Other inputs=0~Vcc
-
-
20
μ
A
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