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參數(shù)資料
| 型號： | KM68S2000 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx8 Bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| 中文描述： | 256Kx8位低功耗和低電壓的CMOS靜態(tài)RAM（256K × 8位低功耗和低電壓的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 138K |
| 代理商： | KM68S2000 |
CMOS SRAM
Preliminary
KM68S2000 Family
Revision 0.0
September 1997
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM68S2000 families are fabricated by SAMSUNG
′
s
advanced CMOS process technology. The families support var-
ious operating temperature ranges and wide voltage operation
for user flexibility of system design. The families also support
low data retention voltage for battery back-up operation with
low data retention current.
FEATURES
Process Technology : TFT
Organization : 256Kx8
Power Supply Voltage
KM68S2000 Family : 2.3~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-TSOP1-0820F, 32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
CS
1
,CS
2
Chip Select Input
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable Input
Vcc
Power
WE
Write Enable Input
Vss
Ground
A
0
~A
17
Address Inputs
N.C.
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
Operating
(I
CC2
, Max)
KM68S2000L-L
Commercial(0~70
°
C)
2.3~2.7V
120
1)
/150
10
μ
A
25mA
32-TSOP1-F
32-sTSOP1-F
2.7~3.3V
35mA
KM68S2000LI-L
Industrial(-40~85
°
C)
2.3~2.7V
15
μ
A
25mA
2.7~3.3V
35mA
FUNCTIONAL BLOCK DIAGRAM
A11
A9
A8
A13
WE
A15
VCC
A17
A16
A14
A7
A6
A5
A4
OE
A0
A1
A2
A3
32-TSOP
S
TSOP
Type1 - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SAMSUNG ELECTRONICS CO., LTD.
A12
Precharge circuit.
Memory array
1024 rows
256
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1 A2 A4 A5
A7
A6
A3
A8
A9
A10
A11
A13
A15
CS1
CS2
WE
OE
I/O
1
Data
cont
Data
cont
I/O
8
A14
A17
A16
Control
Logic
Vcc
Vss
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| KM68S4000C | 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM(512K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68U1000C | 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68V1000C | 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68U2000A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68V2000A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68U1000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68U1000BL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68U1000BL/L-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68U1000BLE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68U1000BLE/LE-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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