參數(shù)資料
型號: KM68S2000
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx8 Bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
中文描述: 256Kx8位低功耗和低電壓的CMOS靜態(tài)RAM(256K × 8位低功耗和低電壓的CMOS靜態(tài)RAM)的
文件頁數(shù): 7/9頁
文件大?。?/td> 138K
代理商: KM68S2000
CMOS SRAM
Preliminary
KM68S2000 Family
Revision 0.0
September 1997
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
t
CW(2)
t
WR(4)
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
CS
1
t
WC
t
WR(4)
t
AS(3)
CS
2
t
CW(2)
t
WP(1)
t
DW
t
DH
t
OW
t
WHZ
Data Undefined
Data Valid
WE
Data in
Data out
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z
CS
2
t
WC
t
AW
t
AS(3)
t
CW(2)
t
WP(1)
t
AW
相關(guān)PDF資料
PDF描述
KM68S4000C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM(512K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68U1000C 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68V1000C 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68U2000A 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
KM68V2000A 256Kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
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