- 您現在的位置：買賣IC網 > PDF目錄373162 > KM68V1002CI (SAMSUNG SEMICONDUCTOR CO. LTD.) 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) PDF資料下載
參數資料
| 型號： | KM68V1002CI |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| 中文描述： | 128K的× 8位高速CMOS靜態(tài)RAM（3.3V的工作）（128K的× 8位高速的CMOS靜態(tài)RAM）的 |
| 文件頁數： | 4/9頁 |
| 文件大?。?/td> | 131K |
| 代理商： | KM68V1002CI |
KM68V1002C/CL, KM68V1002CI/CLI
CMOS SRAM
PRELIMINARY
Revision 0.0
August 1998
- 4 -
READ CYCLE
NOTE: The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
KM68V1002C/CL-12
KM68V1002C/CL-15
KM68V1002C/CL-20
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
12
-
15
-
20
-
ns
Address Access Time
t
AA
-
12
-
15
-
20
ns
Chip Select to Output
t
CO
-
12
-
15
-
20
ns
Output Enable to Valid Output
t
OE
-
6
-
7
-
9
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
6
-
7
-
9
ns
Output Disable to High-Z Output
t
OHZ
0
6
-
7
-
9
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
12
-
15
-
20
ns
TEST CONDITIONS
NOTE: The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=3.3
±
0.3V, unless otherwise noted.)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
319
353
+3.3V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
相關PDF資料 |
PDF描述 |
|---|---|
| KM68V257C | 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V257E | 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V257EI | 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V4002B | 512Kx8 Bit High Speed Static RAM(3.3V Operating)(512K x8位高速CMOS 靜態(tài) RAM) |
| KM68V4002BI | 512Kx8 Bit High Speed Static RAM(3.3V Operating)(512K x8位高速CMOS 靜態(tài) RAM) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM68V2000ALTGI-7L | 制造商:Samsung Electro-Mechanics 功能描述:256K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| KM68V257C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out. |
| KM68V257C-15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out. |
| KM68V257C-17 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out. |
| KM68V257E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating) |
發(fā)布緊急采購，3分鐘左右您將得到回復。