參數(shù)資料
型號: KM68V512B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM)
中文描述: 64Kx8位低功耗和低電壓的CMOS靜態(tài)RAM(64K的x8位高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 6/10頁
文件大小: 158K
代理商: KM68V512B
KM68V512B, KM68U512B Family
CMOS SRAM
Advance
Revision 0.0
November 1997
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
1
=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
1
Address
OE
Data ou
t
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
CS
2
t
OH
t
AA
t
OLZ
t
LZ
t
OHZ
t
HZ(1,2)
t
RC
t
CO2
t
OE
t
CO1
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