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參數(shù)資料
| 型號： | KM736FV4011 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx36 Synchronous SRAM(128Kx36位同步靜態(tài) RAM) |
| 中文描述： | 128K × 36至同步SRAM（128K × 36至位同步靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 5/13頁 |
| 文件大小： | 297K |
| 代理商： | KM736FV4011 |
PRELIMINARY
Rev 0.2
Dec. 1997
KM718FV4011
128Kx36 & 256Kx18 SRAM
- 5 -
KM736FV4011
DC CHARACTERISTICS
NOTE
: 1. Minimum cycle. I
OUT
=0mA.
2. 50% read cycles.
Parameter
Symbol
Min
Max
Unit
Note
Average Power Supply Operating Current-x36
(V
IN
=V
IH
or V
IL
, ZZ & SS=V
IL
)
I
DD44
I
DD5
I
DD6
-
700
650
600
mA
1, 2
Average Power Supply Operating Current-x18
(V
IN
=V
IH
or V
IL
, ZZ & SS=V
IL
)
I
DD44
I
DD5
I
DD6
-
650
600
550
mA
1, 2
Power Supply Standby Current
(V
IN
=V
IH
or V
IL
, ZZ=V
IH
)
I
SB
-
60
mA
1
Input Leakage Current
(V
IN
=V
SS
or V
DD
)
I
LI
-1
1
μ
A
Output Leakage Current
(V
OUT
=V
SS
or V
DDQ
, ZZ=V
IH
, G=V
IH
)
I
LO
-1
1
μ
A
Output High Voltage(I
OH
=-2mA)
V
OH
V
DDQ
/2+0.3
V
DDQ
V
Output Low Voltage(I
OL
=2mA)
V
OL
V
SS
V
DDQ
/2-0.3
V
ABSOLUTE MAXIMUM RATINGS
NOTE
: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Value
Unit
Note
Core Supply Voltage Relative to V
SS
V
DD
-0.5 to 3.9
V
Output Supply Voltage Relative to V
SS
V
DDQ
V
DD
V
Voltage on any I/O pin Relative to V
SS
V
TERM
-0.5 to V
DD
+0.5
V
Maximum Power Dissipation
P
D
3
W
Output Short-Circuit Current
I
OUT
25
mA
Operating Temperature
T
OPR
0 to 70
°
C
°
C
Storage Temperature
T
STG
-55 to 125
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Note
Core Power Supply Voltage
V
DD
3.15
3.3
3.45
V
Output Power Supply Voltage
V
DDQ
1.4
1.5
1.6
V
Input High Level
V
IH
V
REF
+0.1
-
V
DD
+0.3
V
Input Low Level
V
IL
-0.3
-
V
REF
- 0.1
V
Input Reference Voltage
V
REF
V
DDQ
/2
-
2V
DDQ
/3
V
Clock Input Signal Voltage
V
IN
-CLK
-0.3
-
V
DDQ
+0.3
V
Clock Input Differential Voltage
V
DIF
-CLK
0.1
-
V
DDQ
+0.6
V
Clock Input Common Mode Voltage
V
CM
-CLK
V
DDQ
/2
-
2V
DDQ
/3
V
Operating Junction Temperature
T
J
10
-
110
°
C
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| KM718FV4021 | 256Kx18 Synchronous SRAM(256Kx18位同步靜態(tài) RAM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM736FV4021 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM736FV4021H-5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM736FV4021H-6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM736FV4021H-7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
| KM736N | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I) |
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