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參數資料
| 型號： | KM736S849 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx36 Synchronous SRAM(256Kx36位同步靜態(tài) RAM) |
| 中文描述： | 256Kx36同步SRAM（256Kx36位同步靜態(tài)內存） |
| 文件頁數： | 8/17頁 |
| 文件大小： | 279K |
| 代理商： | KM736S849 |
PRELIMINARY
KM736S849
KM718S949
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 8 -
Rev 0.5
Aug. 1998
ASYNCHRONOUS TRUTH TABLE
(See Notes 1 and 2)
:
Operation
ZZ
OE
I/O Status
Sleep Mode
H
X
High-Z
Read
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
NOTE
1. X means "Don
′
t Care".
2. For write cycles that following read cycles, the output buffers must be
disabled with OE, otherwise data bus contention will be occur.
3. Sleep Mode means power Sleep Mode of which stand-by current does
not depend on cycle time.
4. Deselected means power Sleep Mode of which stand-by current
depends on cycle time.
ABSOLUTE MAXIMUM RATINGS*
*NOTE
: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 3.6
V
Voltage on Any Other Pin Relative to V
SS
V
IN
-0.3 to 3.6
V
Power Dissipation
P
D
1.4
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
70
°
C)
*NOTE
: V
DD
and V
DDQ
must be supplied with identical vlotage levels
.
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
DD
2.375
2.5
2.625
V
V
DDQ
2.375
2.5
2.625
V
Ground
V
SS
0
0
0
V
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*NOTE
: Sampled not 100% tested.
Parameter
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
8
pF
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