參數(shù)資料
型號(hào): KMM366F803BK2
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 64 DRAM DIMM(8M x 64 動(dòng)態(tài) RAM模塊)
中文描述: 8米× 64的DRAM內(nèi)存(8米× 64動(dòng)態(tài)內(nèi)存模塊)
文件頁數(shù): 18/20頁
文件大?。?/td> 416K
代理商: KMM366F803BK2
DRAM MODULE
KMM366F80(8)3BK2
CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
COLUMN
ADDRESS
t
RAS
t
RSH
t
CHR
t
RAL
t
CSR
t
CPT
t
RP
t
CAS
t
ASC
t
CAH
READ CYCLE
V
OH
-
V
OL
-
DATA-OUT
DQ
t
REZ
t
CLZ
WRITE CYCLE
V
IH
-
V
IL
-
DATA-IN
DQ
t
DH
t
DS
W
V
IH
-
V
IL
-
t
WP
t
CWD
t
CWL
t
RWL
READ-MODIFY-WRITE
t
AWD
V
IH
-
V
IL
-
OE
t
OEA
t
AA
t
CAC
t
DS
t
DH
VALID
DATA-OUT
V
I/OH
-
V
I/OL
-
DQ
Don
t care
Undefined
V
IH
-
V
IL
-
OE
t
OEA
t
OEZ
OE
V
IH
-
V
IL
-
t
RCS
t
CLZ
t
OEZ
t
OED
t
WRP
t
WRH
t
RRH
t
RCH
t
RCS
t
CAC
t
AA
V
IH
-
V
IL
-
W
t
WRP
t
WRH
t
WCS
t
WCH
t
CWL
V
IH
-
V
IL
-
W
t
WP
t
RWL
t
WRP
t
WRH
VALID
DATA-IN
NOTE : This timing diagram is applied to all devices besides 64M DRAM based modules.
t
CEZ
t
WEZ
相關(guān)PDF資料
PDF描述
KMM366F884BS1 8M x 64 DRAM DIMM(8M x 64 動(dòng)態(tài) RAM模塊)
KMM366F804BS1 8M x 64 DRAM DIMM(8M x 64 動(dòng)態(tài) RAM模塊)
KMM366S1603BTL 16Mx64 SDRAM DIMM(16Mx64 動(dòng)態(tài) RAM模塊)
KMM366S1623CTY-GL PC100 SDRAM MODULE
KMM366S1623DTL PC66 Unbuffered DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM366S1623AT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
KMM366S1623AT-G0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
KMM366S1623AT-G2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
KMM366S1623AT-G8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
KMM366S1623BT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 SDRAM MODULE