參數(shù)資料
型號: KMM366F803BK2
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 64 DRAM DIMM(8M x 64 動態(tài) RAM模塊)
中文描述: 8米× 64的DRAM內(nèi)存(8米× 64動態(tài)內(nèi)存模塊)
文件頁數(shù): 5/20頁
文件大?。?/td> 416K
代理商: KMM366F803BK2
DRAM MODULE
KMM366F80(8)3BK2
AC CHARACTERISTICS
(0
°
C
T
A
70
°
C, V
CC
=3.3V
±
0.3V. See notes 1,2.)
Parameter
Symbol
-5
-6
Unit
Note
Min
45
47
5
10
5
Max
Min
53
58
5
10
5
Max
Column address to W delay time
CAS precharge time to W delay time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper page cycle time
Hyper page read-modify-write cycle time
CAS precharge time(Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Output data hold time(C-B-R refresh)
Output buffer turn off delay time from RAS
Output buffer turn off delay time from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper page cycle)
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
WRP
t
WRH
t
OEA
t
OED
t
OEZ
t
OEH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7
13
13
13
3,13
12
12
28
35
20
67
7
50
30
10
10
25
73
10
60
35
10
10
200K
200K
13
13
13
13
13
13
13
15
10
3
5
5
3
3
15
5
5
5
5
13
3
5
5
3
3
15
5
5
5
5
13
13
13
6,11
6,13
13
13
13
13
13
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