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參數(shù)資料
| 型號(hào)： | KMM378S1620BT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16Mx72 SDRAM DIMM(16M x 72 動(dòng)態(tài) RAM模塊) |
| 中文描述： | 16Mx72 SDRAM的內(nèi)存（1,600 × 72動(dòng)態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大小： | 183K |
| 代理商： | KMM378S1620BT |
SDRAM MODULE
KMM378S1620BT
REV. 3 April. '98
Preliminary
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
-10
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
2,040
1,860
1,860
1,770
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
20
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
20
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during
30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
270
mA
I
CC2
NS
74
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
38
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
38
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during
30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
450
mA
I
CC3
NS
270
mA
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA
Page Burst
t
CCD
= 2CLKs
3
2,220
1,860
1,860
1,860
mA
1
2
1,680
1,860
1,680
1,590
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
2,700
2,430
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
20
mA
3
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 2 Drive ICs.
Note :
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