參數(shù)資料
型號(hào): KMM53216004BK
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 32 DRAM SIMM(16M x 32 動(dòng)態(tài) RAM模塊)
中文描述: 1,600 × 32的DRAM上海藥物研究所(1,600 × 32動(dòng)態(tài)內(nèi)存模塊)
文件頁數(shù): 20/20頁
文件大?。?/td> 386K
代理商: KMM53216004BK
DRAM MODULE
KMM53216004BK/BKG
PACKAGE DIMENSIONS
.133(3.38)
4.250(107.95)
3.984(101.19)
.125(3.17)
MIN
R.062
±
.004(R1.57
±
.10)
.250(6.35)
3.750(95.25)
.250(6.35)
Units : Inches (millimeters)
Gold/Solder Plating Lead
.010(.25)MAX
.050(1.27)
.041
±
.004(1.04
±
.10)
.100(2.54)
MIN
.350(8.89)
MAX
.054(1.37)
.047(1.19)
Tolerances :
±
.005(.13) unless otherwise specified
NOTE : The used device is 16Mx4 DRAM, SOJ
DRAM Part No. : KMM53216004BK/BKG -- KM44C16104BK
1.250(31.75)
.400(10.16)
.125 DIA
±
.002(3.18
±
.051)
R.062(1.57)
.250(6.35)
.080(2.03)
( Back view )
( Front view )
相關(guān)PDF資料
PDF描述
KMM53216004BV 16M x 32 DRAM SIMM(16M x 32 動(dòng)態(tài) RAM模塊)
KMM53216004CK 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM53216004BKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM53216004CKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM5322104CKU 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM53216004BKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM53216004CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM53216004CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM5322104CKU 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
KMM5322104CKUG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V