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參數(shù)資料
| 型號： | KMM5328004BSW |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 32 DRAM SIMM(8M x 32 動態(tài) RAM模塊) |
| 中文描述： | 8米× 32的DRAM上海藥物研究所（8米× 32動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 387K |
| 代理商： | KMM5328004BSW |
DRAM MODULE
KMM5328004BSW/BSWG
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
Item
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
4
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0V at pulse width
≤
20ns, which is measured at V
CC
.
*2 : -2.0V at pulse width
≤
20ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Item
Symbol
Min
4.5
0
2.4
-1.0
*2
Typ
Max
5.5
0
V
CC
*1
0.8
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
V
CC
V
SS
V
IH
V
IL
5.0
0
-
-
V
V
V
V
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I(
IL)
I(
OL)
V
OH
V
OL
Symbol
Speed
KMM5328004BSW/BSWG
Unit
Min
Max
244
224
8
244
224
224
204
4
244
224
10
10
-
0.4
I
CC1
-5
-6
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
I
CC2
Don
′
t care
-5
-6
-5
-6
Don
′
t care
-5
-6
-
-
-
-
-
-
-
-
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Don
′
t care
-10
-10
2.4
-
Don
′
t care
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
:Hyper Page Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0
≤
V
IN
≤
Vcc+0.5V, all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V
≤
V
OUT
≤
Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KMM5328004BSWG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5328004CSW | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5328004CSWG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5328100CK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| KMM5328100CKG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
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