參數(shù)資料
型號: KMM53632004CKG
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
中文描述: 32M的× 36的DRAM上海藥物研究所利用16Mx4
文件頁數(shù): 13/19頁
文件大?。?/td> 434K
代理商: KMM53632004CKG
DRAM MODULE
KMM53632004BK/BKG
HYPER PAGE READ AND WRITE MIXED CYCLE
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
COLUMN
ADDRESS
ROW
ADDR
t
RASP
t
RP
Don
t care
Undefined
V
I/OH
-
V
I/OL
-
DQ
t
WEZ
t
CP
t
CP
t
HPC
t
HPC
t
HPC
t
RAD
t
RAH
t
ASC
t
CAH
t
CAH
t
CAH
t
ASC
t
CAH
t
RCH
t
RCS
t
RCS
t
RCH
t
ASC
COLUMN
ADDRESS
COL.
ADDR
VALID
DATA-OUT
t
REZ
t
AA
t
WCS
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-IN
t
RAC
COL.
ADDR
t
CAS
t
ASR
t
CAS
t
CAS
t
CAS
t
ASC
t
CP
t
RCH
t
WCH
t
WPE
t
CLZ
t
CPA
t
WED
t
AA
t
WEZ
t
DS
t
DH
t
CAC
t
OEA
READ(
t
CAC
)
READ(
t
CPA
)
WRITE
READ(
t
AA
)
相關(guān)PDF資料
PDF描述
KMM5364005BSWG 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CSWG 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CK 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364005CSW 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CKG 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KMM5364003BSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364003BSWG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364003CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5364003CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5364003CSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V