參數(shù)資料
型號(hào): KMM53632004CKG
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
中文描述: 32M的× 36的DRAM上海藥物研究所利用16Mx4
文件頁(yè)數(shù): 14/19頁(yè)
文件大?。?/td> 434K
代理商: KMM53632004CKG
DRAM MODULE
KMM53632004BK/BKG
Don
t care
RAS - ONLY REFRESH CYCLE*
NOTE : W, OE, D
IN
= Don
t care
Undefined
D
OUT
= OPEN
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
ROW
ADDR
t
RC
t
RP
t
ASR
t
CRP
t
RAS
t
RAH
t
RPC
t
CRP
OPEN
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE , A = Don
t care
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
t
RC
t
RP
t
RAS
t
RPC
t
CP
t
RPC
t
CSR
t
CHR
t
CEZ
V
OH
-
V
OL
-
DQ
t
WRP
t
WRH
W
V
IH
-
V
IL
-
t
RP
* In RAS-only refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off.
相關(guān)PDF資料
PDF描述
KMM5364005BSWG 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CSWG 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CK 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
KMM5364005CSW 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364005CKG 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V
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KMM5364003BSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364003BSWG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
KMM5364003CK 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5364003CKG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
KMM5364003CSW 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V