參數(shù)資料
型號： KMM965G112
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Mx64 SGRAM SODIMM(1Mx64 圖形RAM模塊)
中文描述： 1Mx64 SGRAM個SODIMM（1Mx64圖形內(nèi)存模塊）
文件頁數(shù)： 6/15頁
文件大?。?/td> 150K
代理商： KMM965G112
SGRAM MODULE
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C V
IH(min)
/V
IL(max)
=2.0V/0.8V)
KMM965G112Q(P)N / KMM966G112Q(P)N
ELECTRONICS
- 7 -
Rev. 2.2 (Jul. 1998)
Parameter
Symbol
Test Condition
CAS
Latency
Speed
Unit
Note
-6
-7
-8
-10
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0 mA
530
490
450
410
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
8
mA
I
CC2
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
8
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
140
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
60
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
12
mA
I
CC3
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
12
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
240
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
160
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst
All bank Activated, t
CCD
= t
CCD
(min)
3
690
630
570
490
mA
1
2
430
430
430
410
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
600
480
480
440
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
8
mA
Operating Current
(One Bank Block Write)
I
CC7
t
CC
≥
t
CC
(min), I
OL
=0mA, t
BWC
(min)
550
510
450
370
mA
Note :
1. Measured with outputs open. Address are changed only one time during tcc(min).
2. Refresh period is 32ms. Address are changed only one time during tcc(min).
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