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參數(shù)資料
| 型號： | KSD5070 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
| 中文描述： | 2.5 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | KSD5070 |
NPN TRIPLE DIFFUSED
KSD5070 PLANAR SILICON TRANSISTOR
COLOR TV HORIZONTAL OUTPUT
APPLICATION (DAMPER DIODE BUILT IN)
High Collector-Base Voltage (V
CBO
=1500V)
High Switching Speed (t
F
. max=0.4uS)
ABSOLUTE MIXIMUM RATING
ELECTRICAL CHARACTERISTICS
(T
C
=25
°
C)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
C
T
J
T
STG
Rating
1500
800
6
2.5
10
50
150
-55 ~ 150
Unit
V
V
V
A
A
W
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25
°
C)
Junction Temperature
Storage Temperature
Characteristic
Symbol
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
V
F
t
F
Test Condition
V
CB
= 800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.6A
I
C
= 2A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.5A
I
F
= 2.5A
I
C
= 2A, I
B
1 = 0.6A
I
B
2 = - 1.2A, V
CC
= 200V
RL = 100
Min
Typ
Max
10
200
Unit
μ
A
mA
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Current Gain Bandwidth Product
Damper Diode Turn On Voltage
Fall Time
40
8
3
8
1.5
2
0.4
V
V
MHz
V
μ
s
1.Base 2.Collector 3.Emitter
TO-3PF
1999 Fairchild Semiconductor Corporation
Rev B.
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| KSD5072 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PLANAR SILICON TRANSISTOR |
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