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參數(shù)資料
| 型號： | KSP2907A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | KSP2907A |
2002 Fairchild Semiconductor Corporation
Rev. A2, February 2002
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
* Collector Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
* Also available as and PN2907
Parameter
Value
-60
-60
-5
-600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°
C
°
C
Test Condition
I
C
= -10
μ
A, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10
μ
A, I
C
=0
V
CB
= -50V, I
E
=0
I
C
= -0.1mA, V
CE
= -10V
V
CE
= -10V, I
C
= -1mA,
V
CE
= -10V , I
C
= -10mA
V
CE
= -10V, *I
C
= -150mA
V
CE
= -10V, *I
C
= -500mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CB
= -10V, I
E
=0
f=1MHz
I
C
= -50mA, V
CE
= -20V
f=100MHz
V
CC
= -30V, I
C
= -150mA
I
B1
= -15mA
V
CC
= -6V, I
C
= -150mA
I
B1
=I
B2
= -15mA
Min.
-60
-60
-5
Typ.
Max.
Units
V
V
V
nA
-10
75
100
100
100
50
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
-0.4
-1.6
-1.3
-2.6
8
V
V
V
V
pF
V
BE
(sat)
Base Emitter Saturation Voltage
C
ob
Output Capacitance
f
T
* Current Gain Bandwidth Product
200
MHz
t
ON
Turn On Time
45
ns
t
OFF
Turn Off Time
100
ns
KSP2907A
General Purpose Transistor
Collector-Emitter Voltage: V
CEO
= 60V
Collector Power Dissipation: P
C
(max)=625mW
Refer to KSP2907 for graphs
1. Emitter 2. Base 3. Collector
TO-92
1
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