參數(shù)資料
型號： KST4126
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： General Purpose Transistor
中文描述： 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/3頁
文件大?。?/td> 44K
代理商： KST4126
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
STG
Storage Temperature
R
TH
(j-a)
Thermal Resistance junction to Ambient
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
* Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
-25
-25
-4
-200
350
150
357
Units
V
V
V
mA
mW
°
C
°
C/W
Test Condition
Min.
-25
-25
-4
Max.
Units
V
V
I
C
= -10
μ
A, I
E
=0
I
C
= -1mA, I
E
=0
I
E
= -10
μ
A, I
C
=0
V
CB
= -20V, I
E
=0
V
BE
= -3V, I
C
=0
V
CE
= -1V, I
C
= -2mA
V
CE
= -1V, I
C
= -50mA
I
C
= -50mA, I
B
= -5mA
I
C
= -50mA, I
B
= -5mA
V
CE
= -20V, I
C
= -10mA, f=100MHz
V
BE
= -0.5V, I
C
=0, f=1MHz
V
CB
= -5V, I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -100
μ
A, R
S
=1K
Noise Bandwidth=10Hz to 15.7KHz
-50
-50
360
nA
nA
120
60
V
CE
(sat)
V
BE
(sat)
f
T
C
ib
C
ob
NF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Input Capacitance
Output Capacitance
Noise Figure
-0.4
-0.95
V
V
250
MHz
pF
pF
dB
10
4.5
4
KST4126
General Purpose Transistor
C3
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KST4126MTF 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KST42 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, NPN, SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:40; No. of Pins:3 ;RoHS Compliant: Yes
KST42MTF 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KST42MTF_Q 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KST43 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Transistor
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