參數(shù)資料
型號: KST4401
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Switching Transistor
中文描述: 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-23, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 55K
代理商: KST4401
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%
Symbol
Parameter
Value
60
40
6
600
350
150
Units
V
V
V
mA
mW
°
C
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
BEV
I
CEX
h
FE
Parameter
Test Condition
Min.
60
40
6
Max.
Units
V
V
V
nA
nA
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cut-off Current
Collector Cut-off Current
* DC Current Gain
I
C
=100
μ
A, I
E
=0
I
C
=1.0mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CE
=35V, V
EB
=0.4V
V
CE
=35V, V
EB
=0.4V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=20mA, V
CE
=10V
f=100MHz
V
CB
=5V, I
E
=0, f=100KHz
V
CC
=30V, V
BE
=2V
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
100
100
20
40
80
100
40
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.4
0.75
0.95
1.2
V
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
0.75
f
T
Current Gain Bandwidth Product
250
MHz
C
ob
t
ON
Output Capacitance
Turn On Time
6.5
35
pF
ns
t
OFF
Turn Off Time
255
ns
KST4401
Switching Transistor
2X
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
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