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參數(shù)資料
| 型號： | KST43 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Voltage Transistor |
| 中文描述： | 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | KST43 |
2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
Collector Base Voltage
: KST42
: KST43
300
200
V
V
V
CEO
Collector-Emitter Voltage
: KST42
: KST43
300
200
6
500
350
150
357
V
V
V
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
mA
mW
°
C
°
C/W
Symbol
BV
CBO
Parameter
Test Condition
Min.
Max.
Units
Collector-Emitter Breakdown Voltage
: KST42
: KST43
I
C
=100
μ
A, I
E
=0
300
200
V
V
BV
CEO
* Collector -Emitter Breakdown Voltage
: KST42
: KST43
I
C
=1mA, I
B
=0
300
200
6
V
V
V
μ
A
μ
A
BV
EBO
I
CBO
I
EBO
h
FE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
I
E
=100
μ
A, I
C
=0
V
CB
=200V, I
E
=0
V
CB
=5V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
0.1
0.1
25
40
40
V
CE
(sat)
V
BE
(sat)
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
0.5
0.9
V
V
: KST42
: KST43
V
CB
=20V, I
E
=0
f=1MHz
V
CE
=20V, I
C
=10mA
f=100MHz
3
4
pF
pF
MHz
f
T
Current Gain Bandwidth Product
50
KST42/43
High Voltage Transistor
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
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| KST43MTF | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST43MTF_Q | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KST4401 | 制造商:Taitron Components Inc 功能描述:Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 |
| KST4401MFT | 制造商:Freescale Semiconductor 功能描述:KST4401MFT |
| KST4401MTF | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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