Micrel, Inc. M9999-030106 22 March 2006 Absolute Maximum Ratings (Note 1) Supply " />
參數(shù)資料
型號(hào)： KSZ8721BI TR
廠商： Micrel Inc
文件頁(yè)數(shù)： 15/32頁(yè)
文件大?。?/td> 0K
描述： TXRX PHY 10/100 2.3.3/5V 48-SSOP
標(biāo)準(zhǔn)包裝： 1,000
類型： 收發(fā)器
驅(qū)動(dòng)器/接收器數(shù)： 1/1
規(guī)程： MII，RMII
電源電壓： 2.375 V ~ 2.625 V
安裝類型： 表面貼裝
封裝/外殼： 48-BSSOP（0.295"，7.50mm 寬）
供應(yīng)商設(shè)備封裝： 48-SSOP
包裝： 帶卷 (TR)
配用： 576-1627-ND - BOARD EVALUATION FOR KSZ8721BMC
576-1626-ND - BOARD EVALUATION FOR KSZ8721BL
其它名稱： KSZ8721BITR
KSZ8721BITR-ND
KS8721B/BT
Micrel, Inc.
M9999-030106
22
March 2006
Absolute Maximum Ratings (Note 1)
Supply Voltage
(VDDC, VDD_PLL, VDD_TX, VDD_RCV,
VDD_RX) ....................................................–0.5V to +3.0V
(V
DD_RX
DDIO)
DD_RX
......................................................–0.5V to +4.0V
Input Voltage ................................................–0.5V to +4.0V
Output Voltage..............................................–0.5V to +4.0V
Lead Temperature (soldering, 10 sec.)...................... 270°C
Storage Temperature (TS) ........................ –55°C to +150°C
Operating Ratings (Note 2)
Supply Voltage
(VDDC, VDD_PLL, VDD_TX, VDD_RCV,
VDD_RX) ........................................... +2.375V to +2.625V
(V
DD_RX
DDIO)
DD_RX
................ +2.375V to +2.625V or +3.0V to +3.6V
Ambient Temperature (TA
Ambient Temperature (T
Ambient Temperature (T )............................ –0°C to +70°C
Package Thermal Resistance
(Note 3)
TQFP (θJA)...................................................................69.64°C/W
SSOP (θJA) .................................................................42.91°C/W
Electrical Characteristics (Note 4)
VDD = 2.5V ±5%; TA
= 2.5V ±5%; T
= 2.5V ±5%; T = 0°C to +70°C; unless noted;
A
bold values indicate –40°C ≤ TA
values indicate –40°C ≤ T
values indicate –40°C ≤ T ≤ +85°C; unless noted.
A
Symbol
Parameter
Condition
Min
Typ
Max
Units
Total Supply Current (including TX output driver current)
IDD1
Normal 100BaseTX
107
mA
IDD2
Normal 10BaseT (50% utilization)
144
mA
IDD3
Power Saving Mode 100BaseTX
47
mA
IDD5
Power Down Mode
4
mA
TTL Inputs
VIH
Input High Voltage
VDD (I/O)
V
–0.8
VIL
Input Low Voltage
0.8
V
IIN
Input Current
VIN = GND ~ VDD
–10
10
A
TTL Outputs
VOH
Output High Voltage
IOH = –4mA
VDD (I/O)
V
–0.4
VOL
Output Low Voltage
IOL = 4mA
0.4
V
|IOZ|
Output Tr-State Leakage
10
A
100BaseTX Receive
RIN
RX+/RX– Differential Input
8
kΩ
Resistance
Propagation Delay
from magnetics to RDTX
50
110
ns
100BaseTX Transmit (measured differentially after 1:1 transformer)
VO
Peak Differential Output Voltage
50Ω from each output to VDD
0.95
1.05
V
VIMB
Output Voltage Imbalance
50Ω from each output to VDD
2
%
tr, tt
Rise/Fall Time
3
5
ns
Rise/Fall Time Imbalance
0
0.5
ns
100BaseTX Transmit (measured differentially after 1:1 transformer)
Duty Cycle Distortion
±0.5
V
Overshoot
5
%
VSET
Reference Voltage of ISET
0.75
ns
Propagation Delay
from TDTX to magentics
45
60
ns
Jitters
0.7
1.4
ns(pk-pk
Note 1. Exceeding the absolute maximum rating may damage the device.
Note 2. The device is not guaranteed to function outside its operating rating. Unused inputs must always be tied to an appropriate logic voltage level
(Ground to VDD).
Note 3. No HS (heat spreader) in package.
Note 4. Specication for packaged product only.
Symbol
Parameter
Condition
Min
Typ
Max
Units
Symbol
Parameter
Condition
Min
Typ
Max
Units
Symbol
Parameter
Condition
Min
Typ
Max
Units
Symbol
Parameter
Condition
Min
Typ
Max
Units
Symbol
Parameter
Condition
Min
Typ
Max
Units
Symbol
Parameter
Condition
Min
Typ
Max
Units
Normal 100BaseTX
107
mA
Normal 100BaseTX
107
mA
Normal 10BaseT (50% utilization)
144
mA
Power Saving Mode 100BaseTX
47
mA
Power Down Mode
4
mA
Normal 100BaseTX
107
mA
Normal 10BaseT (50% utilization)
144
mA
Power Saving Mode 100BaseTX
47
mA
Power Down Mode
4
mA
Normal 100BaseTX
107
mA
Normal 10BaseT (50% utilization)
144
mA
Power Saving Mode 100BaseTX
47
mA
Power Down Mode
4
mA
Normal 100BaseTX
107
mA
Normal 10BaseT (50% utilization)
144
mA
Power Saving Mode 100BaseTX
47
mA
Power Down Mode
4
mA
Normal 100BaseTX
107
mA
Normal 10BaseT (50% utilization)
144
mA
Power Saving Mode 100BaseTX
47
mA
Power Down Mode
4
mA
Input High Voltage
V
Input High Voltage
V
Input Low Voltage
0.8
V
Input Current
V
Input High Voltage
V
Input Low Voltage
0.8
V
–10
10
A
–0.8
Input Low Voltage
0.8
V
–10
10
A
–0.8
Input Low Voltage
0.8
V
–10
10
A
Input Low Voltage
0.8
V
–10
10
A
Output High Voltage
I
Output High Voltage
I
Output Low Voltage
I
Output Tr-State Leakage
10
A
= –4mA
V
= 4mA
0.4
V
Output Tr-State Leakage
10
A
= 4mA
0.4
V
Output Tr-State Leakage
10
A
= 4mA
0.4
V
Output Tr-State Leakage
10
A
= 4mA
0.4
V
Output Tr-State Leakage
10
A
Resistance
RX+/RX– Differential Input
8
kΩ
Propagation Delay
from magnetics to RDTX
50
110
ns
RX+/RX– Differential Input
8
kΩ
Propagation Delay
from magnetics to RDTX
50
110
ns
RX+/RX– Differential Input
8
kΩ
Propagation Delay
from magnetics to RDTX
50
110
ns
RX+/RX– Differential Input
8
kΩ
Propagation Delay
from magnetics to RDTX
50
110
ns
RX+/RX– Differential Input
8
kΩ
Propagation Delay
from magnetics to RDTX
50
110
ns
Peak Differential Output Voltage
50Ω from each output to V
Rise/Fall Time Imbalance
0
0.5
ns
Peak Differential Output Voltage
50Ω from each output to V
Output Voltage Imbalance
50Ω from each output to V
Rise/Fall Time
3
5
ns
Rise/Fall Time Imbalance
0
0.5
ns
0.95
1.05
V
2
%
Rise/Fall Time
3
5
ns
Rise/Fall Time Imbalance
0
0.5
ns
0.95
1.05
V
2
%
Rise/Fall Time
3
5
ns
Rise/Fall Time Imbalance
0
0.5
ns
0.95
1.05
V
2
%
Rise/Fall Time
3
5
ns
Rise/Fall Time Imbalance
0
0.5
ns
0.95
1.05
V
2
%
Rise/Fall Time
3
5
ns
Rise/Fall Time Imbalance
0
0.5
ns
Duty Cycle Distortion
±0.5
V
Propagation Delay
from TDTX to magentics
45
60
ns
Jitters
0.7
1.4
Duty Cycle Distortion
±0.5
V
Overshoot
5
%
Reference Voltage of ISET
0.75
ns
Propagation Delay
from TDTX to magentics
45
60
ns
Jitters
0.7
1.4
Duty Cycle Distortion
±0.5
V
Overshoot
5
%
Reference Voltage of ISET
0.75
ns
Propagation Delay
from TDTX to magentics
45
60
ns
Jitters
0.7
1.4
Duty Cycle Distortion
±0.5
V
Overshoot
5
%
Reference Voltage of ISET
0.75
ns
Propagation Delay
from TDTX to magentics
45
60
ns
Jitters
0.7
1.4
Duty Cycle Distortion
±0.5
V
Overshoot
5
%
Reference Voltage of ISET
0.75
ns
Propagation Delay
from TDTX to magentics
45
60
ns
Jitters
0.7
1.4
Duty Cycle Distortion
±0.5
V
Overshoot
5
%
Reference Voltage of ISET
0.75
ns
Propagation Delay
from TDTX to magentics
45
60
ns
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