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參數(shù)資料
| 型號(hào)： | KTC3531T |
| 廠商： | KEC Holdings |
| 英文描述： | LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS |
| 中文描述： | 低頻功率放大器，轉(zhuǎn)爐電子調(diào)速器中的應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 73K |
| 代理商： | KTC3531T |
2001. 6. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3531T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) at I
C
=0.5A.
Complementary to KTA1531T.
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
2.9 0.2
1.6+0.2/-0.1
+
+
D
E
F
G
H
I
J
K
L
TSM
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
+
+
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=2V, I
C
=50mA
120
-
400
h
FE
(2)
V
CE
=2V, I
C
=1A(Pulse)
30
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
0.1
0.3
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=500mA, I
B
=50mA
-
0.85
1.2
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA
-
180
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
15
-
pF
Note : h
FE
Classification Y:120
240, GR(G):200
400
* Package mounted on a ceramic board (600
0.8
)
h Rank
Type Name
Marking
Lot No.
H A
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