參數(shù)資料
型號(hào): L2N5401
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: Amplifier Transistors PNP Silicon
中文描述: 進(jìn)步黨硅晶體管放大器
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 104K
代理商: L2N5401
LESHAN RADIO COMPANY, LTD.
L2N5401-2/4
L2N5401
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
150
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
160
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Collector Cutoff Current
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100
°
C)
I
CBO
50
50
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
50
nAdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
h
FE
50
60
50
240
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.2
0.5
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
1.0
1.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
100
300
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
6.0
pF
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
40
200
Noise Figure
(I
C
= 250 Adc, V
CE
= 5.0 Vdc, R
S
= 1.0 k , f = 1.0 kHz)
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
NF
8.0
dB
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