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參數(shù)資料
| 型號(hào)： | L2N7003LT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | Small Signal MOSFET 115 mAmps, 60 Volts |
| 中文描述： | 小信號(hào)MOSFET 115 mAmps，60伏特 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | L2N7003LT1 |
LESHAN RADIO COMPANY, LTD.
L2N7002LT1–2/3
L2N7002LT1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
μ
Adc)
V
(BR)DSS
60
–
–
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 60 Vdc)
T
J
= 25
°
C
T
J
= 125
°
C
I
DSS
–
–
–
–
1.0
500
μ
Adc
Gate–Body Leakage Current, Forward
(V
GS
= 20 Vdc)
I
GSSF
–
–
100
nAdc
Gate–Body Leakage Current, Reverse
(V
GS
= –20 Vdc)
I
GSSR
–
–
–100
nAdc
ON CHARACTERISTICS
(Note 2.)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
V
GS(th)
1.0
–
2.5
Vdc
On–State Drain Current
(V
DS
≥
2.0 V
DS(on)
, V
GS
= 10 Vdc)
I
D(on)
500
–
–
mA
Static Drain–Source On–State Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
V
DS(on)
–
–
–
–
3.75
0.375
Vdc
Static Drain–Source On–State Resistance
(V
GS
= 10 V, I
D
= 500 mAdc)
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= 25
°
C
T
C
= 125
°
C
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
r
DS(on)
–
–
–
–
–
–
–
–
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(V
DS
≥
2.0 V
DS(on)
, I
D
= 200 mAdc)
g
FS
80
–
–
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
–
–
50
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
–
–
25
pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
–
–
5.0
pF
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
DD
= 25 Vdc
, I
D
(V
R
G
= 25
, R
L
= 50
, V
gen
= 10 V)
500 mAdc,
t
d(on)
–
–
20
ns
Turn–Off Delay Time
t
d(off)
–
–
40
ns
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(I
S
= 11.5 mAdc, V
GS
= 0 V)
V
SD
–
–
–1.5
Vdc
Source Current Continuous
(Body Diode)
I
S
–
–
–115
mAdc
Source Current Pulsed
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
I
SM
–
–
–800
mAdc
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