參數(shù)資料
型號: L6716
廠商: STMICROELECTRONICS
元件分類: 穩(wěn)壓器
英文描述: DUAL SWITCHING CONTROLLER, 225 kHz SWITCHING FREQ-MAX, QCC48
封裝: 7 X 7 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFQFP-48
文件頁數(shù): 25/57頁
文件大小: 829K
代理商: L6716
L6716
Load transient boost technology
Doc ID 14521 Rev 3
31/57
14
Load transient boost technology
LTB Technology further enhances the performances of dual-edge asynchronous systems
by reducing the system latencies and immediately turning ON all the phases to provide the
correct amount of energy to the load.
By properly designing the LTB network, as well as the LTB gain, the undershoot and the
ring-back can be minimized also optimizing the output capacitors count.
LTB Technology monitors the output voltage through a dedicated pin (see Figure 16)
detecting load-transients with selected dV/dt, it cancels the interleaved phase-shift, turning-
on simultaneously all phases.
It then implements a parallel independent loop that (bypassing error amplifier (E/A)
latencies) reacts to load-transients in very short time (<< 200 ns).
LTB Technology control loop is reported in Figure 15.
Figure 15.
LTB Technology control loop
The LTB detector is able to detect output load transients by coupling the output voltage
through an RLTB - CLTB network. After detecting a load transient, the LTB ramp is reset and
then compared with the COMP pin level. The resulting duty-cycle programmed is then OR-
ed with the PWMx signal of each phase by-passing the main control loop. All the phases will
then be turned-on together and the EA latencies results bypassed as well.
Short LTB pin to SGND to disable the LTB Technology: in this condition the device works
as a dual-edge asynchronous PWM controller.
Sensitivity of the load transient detector and the gain of the LTB ramp can be programmed in
order to control precisely both the undershoot and the ring-back.
Detector design. RLTB - CLTB is design according to the output voltage deviation dVOUT
which is desired the controller to be sensitive as follow:
Ref
FB
COMP
VSEN
FBG
R
F
C
F
R
FB
PWM
L/N
ESR
CO
R
O
d VCOMP
VOUT
ZF(s)
ZFB(s)
V
COMP
C
P
C
FB
LT
B
I DR
OOP
Monitor
RLTB
CLTB
PWM_BOOST
LTB Ramp
LTB
LT Detect
VPROG
GND DROP
RECOVERY
RLTBGAIN
LTBGAIN
R
LTB
dV
OUT
25
μA
------------------
=
C
LTB
1
2
π R
LTB
NF
SW
--------------------------------------------------
=
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